Skip to content
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Menu
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Menu
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
engineering
Defects engineering induced room temperature ferromagnetism in transition metal doped MoS2
Materials and Design, Volume 121, Year 2017
Notification
URL copied to clipboard!
Description
First principle calculations are employed to calculate the electronic structure and magnetic properties of transition-metal doped MoS2 considering the effects of defect/defect complex. It shows that pure MoS2 with both Mo and S vacancy are nonmagnetic. Mn, Fe, Co and Ni substitution in Mo site all lead to spin polarized state. Considering defect complex, the results show that (TMMo + TMMo) defect complex has the lowest formation energy at high S pressure and prefers close to each other except for (CoMo + CoMo). Experimentally, we doped Mn, Co, Ni and Fe into MoS2 single crystals. The doping leads to room temperature ferromagnetic ordering and clustering, agreeing well with the first principle calculations. © 2017 Elsevier Ltd
Authors & Co-Authors
Murmu, Peter Paul
New Zealand, Lower Hutt
Gns Science
Kennedy, John Vedamuthu
New Zealand, Lower Hutt
Gns Science
Li, Sean S.
Australia, Sydney
Unsw Sydney
Statistics
Citations: 88
Authors: 3
Affiliations: 5
Identifiers
Doi:
10.1016/j.matdes.2017.02.037
ISSN:
02641275