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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
chemical engineering
Doping monolayer graphene with single atom substitutions
Nano Letters, Volume 12, No. 1, Year 2012
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Description
Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. © 2011 American Chemical Society.
Authors & Co-Authors
Wang, Hongtao
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
China, Hangzhou
Zhejiang University
Wang, Qingxiao
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Cheng, Yingchun
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Li, Kun
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Yao, Yingbang
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Zhang, Qiang
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Dong, Cezhou
China, Hangzhou
Zhejiang University
Wang, Peng
China, Hangzhou
Zhejiang University
Schwingenschlögl, Udo Erich
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Yang, Wei
China, Hangzhou
Zhejiang University
Zhang, Xixiang
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Statistics
Citations: 520
Authors: 11
Affiliations: 2
Identifiers
Doi:
10.1021/nl2031629
ISSN:
15306984
e-ISSN:
15306992