Skip to content
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Menu
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Menu
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
engineering
Investigation of structural and photoluminescence properties of gas and metal ions doped zinc oxide single crystals
Journal of Alloys and Compounds, Volume 616, Year 2014
Notification
URL copied to clipboard!
Description
We report the structural and photoluminescence properties of annealing dependent and gas and metal ion implanted zinc oxide (ZnO) single crystals. Gd, Na and N ions were implanted into ZnO at an average implantation depth of 12, 24, and 38 nm, respectively from the surface layer. The samples were annealed under high vacuum or oxygen at 650 °C and their effects were studied. Raman spectra of Gd implanted and oxygen annealed ZnO revealed the A1 longitudinal optical, A1(LO) mode, usually assigned to intrinsic defects, which suggested a partial recovery of implantation induced disorders, unlike ion implanted and vacuum annealed ZnO. Low temperature photoluminescence spectra from unimplanted and Gd implanted ZnO revealed transitions from neutral bound exciton, two electron satellites (TES) and LO phonon replicas. Deep level transitions in unimplanted and Gd implanted ZnO were affected by the annealing atmosphere, and oxygen annealing reduced the deep level emission, suggesting oxygen vacancy related emissions. A small red-shift in the near-band edge emission and a blue-shift in deep level emissions were observed in N and Na implanted and annealed ZnO, indicating slight changes in their band gap energies. © 2014 Elsevier B.V. All rights reserved.
Authors & Co-Authors
Kennedy, John Vedamuthu
New Zealand, Lower Hutt
Gns Science
New Zealand, Wellington
Macdiarmid Institute for Advanced Materials and Nanotechnology
Murmu, Peter Paul
New Zealand, Lower Hutt
Gns Science
Manikandan, E.
India, Chennai
B.s.abdur Rahman University
Statistics
Citations: 207
Authors: 3
Affiliations: 4
Identifiers
Doi:
10.1016/j.jallcom.2014.07.179
ISSN:
09258388
Research Areas
Environmental
Study Design
Cohort Study