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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
chemical engineering
Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits
Nano Letters, Volume 11, No. 10, Year 2011
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Description
We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.
Authors & Co-Authors
Fahad, Hossain Mohammad
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Smith, Casey Eben
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Prieto Rojas, Jhonathan
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Hussain, Muhammad M.
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Statistics
Citations: 142
Authors: 4
Affiliations: 1
Identifiers
Doi:
10.1021/nl202563s
ISSN:
15306984
e-ISSN:
15306992
Study Approach
Qualitative