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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
physics and astronomy
Experimental electronic structure of In2O3 and Ga2O3
New Journal of Physics, Volume 13, Article 085014, Year 2011
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Description
Transparent conducting oxides (TCOs) pose a number of serious challenges. In addition to the pursuit of high-quality single crystals and thin films, their application has to be preceded by a thorough understanding of their peculiar electronic structure. It is of fundamental interest to understand why these materials, transparent up to the UV spectral regime, behave also as conductors. Here we investigate In2O3 and Ga2O3, two binary oxides, which show the smallest and largest optical gaps among conventional n-type TCOs. The investigations on the electronic structure were performed on high-quality n-type single crystals showing carrier densities of ∼1019 cm-3 (In2O3) and ∼1017 cm-3(Ga2O3). The subjects addressed for both materials are: the determination of the band structure along high-symmetry directions and fundamental gaps by angular resolved photoemission (ARPES). We also address the orbital character of the valence- and conduction-band regions by exploiting photoemission cross. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
Authors & Co-Authors
Janowitz, Christoph
Germany, Berlin
Humboldt-universität zu Berlin
Germany, Berlin
Leibniz-institut Für Kristallzüchtung
Mohamed, Mansour Peer
Germany, Berlin
Humboldt-universität zu Berlin
Manzke, Recardo
Germany, Berlin
Humboldt-universität zu Berlin
Gała̧zka, Zbigniew
Germany, Berlin
Leibniz-institut Für Kristallzüchtung
Uecker, Reinhard L.
Germany, Berlin
Leibniz-institut Für Kristallzüchtung
Irmscher, Klaus
Germany, Berlin
Leibniz-institut Für Kristallzüchtung
Fornari, Roberto
Germany, Berlin
Leibniz-institut Für Kristallzüchtung
Schmeißer, Dieter
Germany, Cottbus
Brandenburgische Technische Universität Cottbus
Varley, Joel Basile
United States, Santa Barbara
University of California, Santa Barbara
Statistics
Citations: 261
Authors: 9
Affiliations: 4
Identifiers
Doi:
10.1088/1367-2630/13/8/085014
ISSN:
13672630