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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
physics and astronomy
Near-infrared photodetection of β-FeSi
2
/Si heterojunction photodiodes at low temperatures
Applied Physics Letters, Volume 102, No. 3, Article 032107, Year 2013
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Description
n-type β-FeSi2/p-type Si heterojunction photodiodes were fabricated by facing-targets direct-current sputtering, and their near-infrared photodetection properties were studied in the temperature range of 50-300 K. At 300 K, devices biased at -5 V exhibited a current responsivity of 16.6 mA/W. The measured specific detectivity was remarkably improved from 3.5 × 10 9 to 1.4 × 1011 cmHz1/2/W as the devices were cooled from 300 K down to 50 K. This improvement is mainly attributable to distinguished suppression in heterojunction leakage current at low temperatures. The obtained results indicate that β-FeSi2/Si heterojunctions offer high potential to be employed as near-infrared photodetectors that are compatible with the current Si technology. © 2013 American Institute of Physics.
Authors & Co-Authors
Izumi, Shota
Japan, Fukuoka
Kyushu University
Shaban, Mahmoud
Egypt, Aswan
Faculty of Engineering
Promros, Nathaporn
Thailand, Bangkok
King Mongkut's Institute of Technology Ladkrabang
Nomoto, Keita
Japan, Fukuoka
Kyushu University
Yoshitake, Tsuyoshi
Japan, Fukuoka
Kyushu University
Statistics
Citations: 37
Authors: 5
Affiliations: 3
Identifiers
Doi:
10.1063/1.4789391
ISSN:
00036951