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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
engineering
Thickness effect on the structural and electrical properties of poly-SiGe films
Materials Research Bulletin, Volume 49, No. 1, Year 2014
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Description
As lateral dimensions of electromechanical devices are scaled down to length scales comparable to electron mean free paths, the influence of thickness effect on their properties becomes sine qua non. This paper presents a detailed study of thickness effect on the Young's modulus, residual stress, resistivity and Hall mobility of ultrathin poly-Si11Ge89 films deposited by low pressure chemical vapour deposition. The Young's moduli for the films thicker than ∼40 nm are close to the bulk value (135 GPa) while those of the thinner films are much lower. The reduction in resistivity and subsequent improved Hall mobility as thickness increases are discussed in light of surface morphology which is evident from atomic microscopy images. The near constant values of Young's modulus, resistivity and Hall mobility for the films thicker than ∼40 nm are attributed to the columnar grain structure as confirmed by the transmission electron microscopy images. © 2013 Elsevier Ltd. All rights reserved.
Authors & Co-Authors
Asafa, Tesleem Babatunde
Saudi Arabia, Riyadh
King Abdulaziz City for Science and Technology
Belgium, Leuven
Interuniversity Microelectronics Centre
Saudi Arabia, Dhahran
King Fahd University of Petroleum and Minerals
Witvrouw, Ann
Belgium, Leuven
Interuniversity Microelectronics Centre
Schneider, D.
Germany, Dresden
Fraunhofer Institute for Material and Beam Technology Iws
Moussa, A.
Belgium, Leuven
Interuniversity Microelectronics Centre
Tabet, Nouar A.
Saudi Arabia, Dhahran
King Fahd University of Petroleum and Minerals
Said, Sayed Ahmed M.
Saudi Arabia, Dhahran
King Fahd University of Petroleum and Minerals
Statistics
Citations: 8
Authors: 6
Affiliations: 4
Identifiers
Doi:
10.1016/j.materresbull.2013.08.054
ISSN:
00255408