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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
engineering
Effect of film thickness and annealing on optical properties of TiO2 thin films and electrical characterization of MOS capacitors
Journal of Materials Science: Materials in Electronics, Volume 25, No. 10, Year 2014
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Description
Titanium dioxide (TiO2) thin films were deposited on glass and silicon (100) substrates by the sol–gel method. The influence of film thickness and annealing temperature on optical transmittance/reflectance of TiO2 films was studied. TiO2 films were used to fabricate metal–oxide–semiconductor capacitors. The capacitance–voltage (C–V), dissipation–voltage (D–V) and current–voltage (I–V) characteristics were studied at different annealing temperatures and the dielectric constant, current density and resistivity were estimated. The loss tangent (dissipation) increased with increase of annealing temperature. © 2014, Springer Science+Business Media New York.
Authors & Co-Authors
Raichur, Ashok M.
India, Bengaluru
Indian Institute of Science
Statistics
Citations: 11
Authors: 1
Affiliations: 3
Identifiers
Doi:
10.1007/s10854-014-2193-7
ISSN:
09574522