Structural, optical, and electrical properties of Yb-doped ZnO thin films prepared by spray pyrolysis method

Yb-doped ZnO thin films were prepared on glass substrates by spray pyrolysis technique in order to investigate the insertion of Yb ions in the ZnO matrix and the related optical properties of the films. The molar ratio of Yb in the spray solution was varied in the range of 0-5 at. %. X-ray diffraction patterns showed that the undoped and Yb-doped ZnO films exhibit the hexagonal wurtzite crystal structure with a preferential orientation along [002] direction. No secondary phase is observed in Yb-doped ZnO films. All films exhibit a transmittance between 75 and 90% in the visible range with a sharp absorption onset about 375 nm corresponding to the fundamental absorption edge at 3.3 eV. The photoluminescence measurements show a clear luminescence band at 980 nm that is characteristic of Yb3+ transition between the electronic levels 2F5/2 and 2F7/2. This is an experimental evidence for an efficient energy transfer from ZnO matrix to Yb3+. Hall effect measurements showed low resistivities and high carrier mobilities which makes these films of interest to photovoltaic devices. © 2011 American Institute of Physics.