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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
chemistry
Vacancy defects induced in sintered polished UO 2 disks by helium implantation
Applied Surface Science, Volume 252, No. 9, Year 2006
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Description
Vacancy defects have been investigated in sintered polished and annealed uranium oxide disks. Slow positron beam coupled with Doppler broadening spectrometer was used to probe the track region of 1 MeV 3 He ions implanted in uranium dioxide (UO 2 ) disks. The low and high momentum annihilation fractions, S and W, respectively, were measured in the first micrometer near surface region of the disks as a function of positron energy. The S and W values indicate that the 1 MeV He ions induce vacancy defects in the track region of their range. The vacancy defect depth distribution is heterogeneous. The positron trapping at these vacancy defects increases with the depth and with the implantation fluence indicating an increase of the vacancy defect concentration. The nature of the induced vacancy defects does not change with the fluence. © 2005 Elsevier B.V. All rights reserved.
Authors & Co-Authors
Labrim, Hicham
France, Paris
Centre de Recherches Internationales Sciences po
France, Saint Paul Lez Durance
Cea Cadarache
Barthe, Marie France
France, Paris
Centre de Recherches Internationales Sciences po
France, Saint Paul Lez Durance
Cea Cadarache
Desgardin, Pierre
France, Paris
Centre de Recherches Internationales Sciences po
France, Saint Paul Lez Durance
Cea Cadarache
Sauvage, Thierry
France, Paris
Centre de Recherches Internationales Sciences po
France, Saint Paul Lez Durance
Cea Cadarache
Blondiaux, Gilbert B.
France, Paris
Centre de Recherches Internationales Sciences po
France, Saint Paul Lez Durance
Cea Cadarache
Corbel, Catherine
France, Palaiseau
École Polytechnique
France, Saint Paul Lez Durance
Cea Cadarache
Piron, Jean Paul
France, Palaiseau
École Polytechnique
France, Saint Paul Lez Durance
Cea Cadarache
Statistics
Citations: 15
Authors: 7
Affiliations: 3
Identifiers
Doi:
10.1016/j.apsusc.2005.08.045
ISSN:
01694332