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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
engineering
Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band
Physica B: Condensed Matter, Volume 401-402, Year 2007
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Description
We have used deep level transient spectroscopy (DLTS) to characterize defects in ZnO grown by pulsed-laser deposition (PLD). Using high resolution Laplace DLTS, we found that at the high temperature side of the commonly observed defect E3 (about 300 meV below the conduction band) another close lying peak (E3′ with thermal activation energy of 370 meV) is also observed. The concentration ratio of E3 and E3′ depends on the annealing history of the samples. It is most prevalent in as-grown samples and samples that had been annealed in an oxygen atmosphere. This suggests that E3′ may be related to the incorporation of oxygen in the lattice. Electron capture onto that E3′ defect strongly increases with increasing temperature. © 2007 Elsevier B.V. All rights reserved.
Authors & Co-Authors
Auret, Francois Danie
South Africa, Pretoria
University of Pretoria
Meyer, Walter E.
South Africa, Pretoria
University of Pretoria
Janse van Rensburg, P. J.
South Africa, Pretoria
University of Pretoria
Hayes, Michael C.
South Africa, Pretoria
University of Pretoria
Nel, Jacqueline M.
South Africa, Pretoria
University of Pretoria
Von Wenckstern, Holger
Germany, Leipzig
Universität Leipzig
Schmidt, H.
Germany, Leipzig
Universität Leipzig
Biehne, G.
Germany, Leipzig
Universität Leipzig
Hochmuth, H.
Germany, Leipzig
Universität Leipzig
Lorenz, Michael Peter Andreas
Germany, Leipzig
Universität Leipzig
Grundmann, Marius
Germany, Leipzig
Universität Leipzig
Statistics
Citations: 32
Authors: 11
Affiliations: 2
Identifiers
Doi:
10.1016/j.physb.2007.08.192
ISSN:
09214526