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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
chemical engineering
Effects of annealing and doping on nanostructured bismuth telluride thick films
Chemistry of Materials, Volume 20, No. 13, Year 2008
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Description
Bismuth telluride is the state-of-the-art thermoelectric (TE) material for cooling applications with a figure of merit of ∼1 at 300 K. There is a need for the development of TE materials based on the concept of thick films for miniaturized devices due to mechanical and manufacturing constraints for the thermoelement dimensions. We reported earlier a method for the fabrication of high-quality nanostructured bismuth telluride thick films with thickness from 100 to 350 μm based on electrochemical deposition techniques. In this paper, annealing is performed to further improve the TE performance of the nanostructured bismuth telluride thick films and n/p-type solid solutions are successfully fabricated by doping Se and Sb, respectively. The conditions for both annealing and doping for the thick films are investigated, and the effects of annealing and doping on morphology, crystalline phase, grain size, Seebeck coefficient, homogeneity, electrical conductivity, and power factor of the bismuth telluride thick films have been studied. © 2008 American Chemical Society.
Authors & Co-Authors
Li, Shanghua
Sweden, Stockholm
The Royal Institute of Technology Kth
Soliman, Hesham Mohamed Abd El Fattah
Sweden, Stockholm
The Royal Institute of Technology Kth
Egypt, New Borg el Arab
Advanced Technology and new Materials Research Institute
Zhou, Jian
Sweden, Stockholm
The Royal Institute of Technology Kth
Toprak, Muhammet Sadaka
Sweden, Stockholm
The Royal Institute of Technology Kth
Muhammed, Mamoun A.
Sweden, Stockholm
The Royal Institute of Technology Kth
Platzek, Dieter
Germany, Koln
Deutsches Zentrum Für Luft- Und Raumfahrt Dlr
Ziolkowski, Pawel
Germany, Koln
Deutsches Zentrum Für Luft- Und Raumfahrt Dlr
Mueller, E.
Germany, Koln
Deutsches Zentrum Für Luft- Und Raumfahrt Dlr
Statistics
Citations: 72
Authors: 8
Affiliations: 3
Identifiers
Doi:
10.1021/cm800696h
ISSN:
08974756