Skip to content
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Menu
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Menu
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
engineering
Acoustic investigation of porous silicon layers
Journal of Materials Science, Volume 30, No. 1, Year 1995
Notification
URL copied to clipboard!
Description
Porous silicon (PS) layers are formed on p+ -type silicon wafers by electrochemical anodization in hydrofluoric acid solutions. Microechography and acoustic signature, V(z), have been performed at 1.5 GHz and 600 MHz, respectively, in order to study the elastic properties of PS layers. The thicknesses of PS layers were measured and longitudinal, shear and Rayleigh velocities and Young's modulus were obtained as a function of porosity. Equations showing the porosity dependence of bulk wave velocities and Young's modulus have also been proposed. © 1995 Chapman & Hall.
Authors & Co-Authors
Da Fonseca, R. J.M.
France, Montpellier
Université de Montpellier
Saurel, J. M.
France, Montpellier
Université de Montpellier
Foucaran, A.
France, Montpellier
Laboratoire Charles Coulomb
Camassel, Jean
France, Montpellier
Laboratoire Charles Coulomb
Massone, E.
France, Montpellier
Laboratoire Charles Coulomb
Taliercio, T.
France, Montpellier
Laboratoire Charles Coulomb
Boumaïza, Youcef
Algeria, Annaba
Université Badji Mokhtar - Annaba
Statistics
Citations: 48
Authors: 7
Affiliations: 3
Identifiers
Doi:
10.1007/BF00352128
ISSN:
00222461
e-ISSN:
15734803
Study Design
Cohort Study