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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
engineering
Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique
Physica Status Solidi (A) Applications and Materials Science, Volume 208, No. 1, Year 2011
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Description
This indium-doped zinc oxide field effect transistor (IZO-FET) with a large ultraviolet (UV) detection sensitivity has been fabricated by inkjet printing technique. In darkness, the IZO-FETs exhibit a saturation current level of about 10 μA, an incremental mobility as high as 8 cm 2 V -1 s -1, and a current on/off ratio of 10 4-10 5. When illuminated by 363 nm, 1.7 mW cm -2 UV light, the IZO-FET displays a photocurrent of 2 mA, and a darkness current of ∼20 nA at an optimized gate voltage of -2 V. The device is effectively turned on in about 5 ms and off in 10 ms. These results suggest that the IZO-FET fabricated by inkjet printing could be a low cost highly sensitive UV photodetector. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Authors & Co-Authors
Wu, Yan
Sweden, Stockholm
The Royal Institute of Technology Kth
China, Wuhan
China University of Geosciences
Girgis, Emad
Egypt, Giza
National Research Centre
Ström, Valter
Sweden, Stockholm
The Royal Institute of Technology Kth
Voit, Wolfgang
Sweden, Stockholm
The Royal Institute of Technology Kth
Belova, Lyubov
Sweden, Stockholm
The Royal Institute of Technology Kth
Rao, K. Venkat
Sweden, Stockholm
The Royal Institute of Technology Kth
Statistics
Citations: 41
Authors: 6
Affiliations: 3
Identifiers
Doi:
10.1002/pssa.201026264
e-ISSN:
18626319
Study Approach
Qualitative