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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
physics and astronomy
Intrinsic nanofilamentation in resistive switching
Journal of Applied Physics, Volume 113, No. 11, Article 114503, Year 2013
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Description
Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator- semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament. © 2013 American Institute of Physics.
Authors & Co-Authors
Wu, X.
Singapore, Singapore City
Singapore University of Technology and Design
China, Nanjing
Mems Key Laboratory of the Ministry of Education
Cha, Dongkyu
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Bosman, Michel
Singapore, Singapore City
A-star, Institute of Materials Research and Engineering
Raghavan, Nagarajan
Singapore, Singapore City
Nanyang Technological University
Migas, Dmitri B.
Belarus, Minsk
Belarusian State University of Informatics and Radioelectronics
Borisenko, Victor E.
Belarus, Minsk
Belarusian State University of Informatics and Radioelectronics
Zhang, Xixiang
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Li, Kun
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Pey, Kinleong
Singapore, Singapore City
Singapore University of Technology and Design
Statistics
Citations: 70
Authors: 9
Affiliations: 6
Identifiers
Doi:
10.1063/1.4794519
ISSN:
00218979