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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
physics and astronomy
Dead layer on silicon p-i-n diode charged-particle detectors
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 744, Year 2014
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Description
Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon p-i-n diode used in the KATRIN neutrino-mass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by diffusion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored. © 2014 Elsevier B.V.
Authors & Co-Authors
Wall, Brandon L.
United States, Seattle
University of Washington
United States, Chicago
Boeing Corporation
Amsbaugh, John F.
United States, Seattle
University of Washington
Beglarian, Armen
Germany, Karlsruhe
Karlsruher Institut Für Technologie
Bergmann, Till
Germany, Karlsruhe
Karlsruher Institut Für Technologie
Bichsel, Hans C.
United States, Seattle
University of Washington
Bodine, L. I.
United States, Seattle
University of Washington
Boyd, Nora Mills
United States, Seattle
University of Washington
Burritt, Tom H.
United States, Seattle
University of Washington
Chaoui, Zine El Abidine
Algeria, Setif
Université Ferhat Abbas Sétif 1
Corona, Thomas J.
United States, Chapel Hill
The University of North Carolina at Chapel Hill
United States, Durham
Triangle Universities Nuclear Laboratory
Doe, Peter J.
United States, Seattle
University of Washington
Enomoto, Sanshiro
United States, Seattle
University of Washington
Harms, Fabian
Germany, Karlsruhe
Karlsruher Institut Für Technologie
Harper, G. C.
United States, Seattle
University of Washington
Howe, Mark A.
United States, Chapel Hill
The University of North Carolina at Chapel Hill
Martin, Eric L.
United States, Seattle
University of Washington
Parno, Diana S.
United States, Seattle
University of Washington
Peterson, D. A.
United States, Seattle
University of Washington
Petzold, Lars
Germany, Karlsruhe
Karlsruher Institut Für Technologie
Renschler, Pascal
Germany, Karlsruhe
Karlsruher Institut Für Technologie
Robertson, R. G.Hamish
United States, Seattle
University of Washington
Schwarz, Johannes
Germany, Karlsruhe
Karlsruher Institut Für Technologie
Steidl, Markus
Germany, Karlsruhe
Karlsruher Institut Für Technologie
van Wechel, Tim D.
United States, Seattle
University of Washington
VanDevender, Brent A.
United States, Richland
Pacific Northwest National Laboratory
Wüstling, Sascha
Germany, Karlsruhe
Karlsruher Institut Für Technologie
Wierman, Kevin J.
United States, Seattle
University of Washington
United States, Chapel Hill
The University of North Carolina at Chapel Hill
United States, Durham
Triangle Universities Nuclear Laboratory
Wilkerson, John F.
United States, Chapel Hill
The University of North Carolina at Chapel Hill
United States, Durham
Triangle Universities Nuclear Laboratory
Statistics
Citations: 32
Authors: 28
Affiliations: 7
Identifiers
Doi:
10.1016/j.nima.2013.12.048
ISSN:
01689002
Study Approach
Quantitative