Quantum Phenomena In Field-Effect-Controlled Semiconductor Nanostructures

Quantum effects resulting from sub-100 nm features in planar, field-effect-controlled semiconductor structures or “devices” are discussed, and experimental results are compared with calculations. These devices are based on the GaAs/AlGaAs modulation-doped field-effect transistor (MODFET) and include: grating-gate lateral surface superlattices (LSSL), grid-gate LSSL, planar-resonant-tunneling field-effect transistors (PRESTFET), multiple parallel quantum wires (MPQW), and arrays of quantum dots (QD). In contrast to conventional, epitaxially grown “vertical” quantum structures, planar structures offer the opportunity for electron confinement in 3, 2, and 1 dimensions, and the flexibility of electrical “tuning” of quantum effects. © 1991 IEEE