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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
materials science
Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
Physical Review B - Condensed Matter and Materials Physics, Volume 84, No. 15, Article 153402, Year 2011
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Description
Fully relativistic first-principles calculations based on density functional theory are performed to study the spin-orbit-induced spin splitting in monolayer systems of the transition-metal dichalcogenides MoS2, MoSe2, WS2, and WSe2. All these systems are identified as direct-band-gap semiconductors. Giant spin splittings of 148-456 meV result from missing inversion symmetry. Full out-of-plane spin polarization is due to the two-dimensional nature of the electron motion and the potential gradient asymmetry. By suppression of the Dyakonov-Perel spin relaxation, spin lifetimes are expected to be very long. Because of the giant spin splittings, the studied materials have great potential in spintronics applications. © 2011 American Physical Society.
Authors & Co-Authors
Zhu, Zhiyong
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Cheng, Yingchun
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Schwingenschlögl, Udo Erich
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Statistics
Citations: 1,149
Authors: 3
Affiliations: 1
Identifiers
Doi:
10.1103/PhysRevB.84.153402
ISSN:
10980121
e-ISSN:
1550235X