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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
physics and astronomy
Damage formation and annealing at low temperatures in ion implanted ZnO
Applied Physics Letters, Volume 87, No. 19, Article 191904, Year 2005
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Description
N, Ar, and Er ions were implanted into ZnO at 15 K within a large fluence range. The Rutherford backscattering technique in the channeling mode was used to study in situ the damage built-up in the Zn sublattice at 15 K. Several stages in the damage formation were observed. From the linear increase of the damage for low implantation fluences, an upper limit of the Zn displacement energy of 65 eV could be estimated for [0001] oriented ZnO. Annealing measurements below room temperature show a significant recovery of the lattice starting at temperatures between 80 and 130 K for a sample implanted with low Er fluence. Samples with higher damage levels do not reveal any damage recovery up to room temperature, pointing to the formation of stable defect complexes. © 2005 American Institute of Physics.
Authors & Co-Authors
Lorenz, K.
Portugal, Sacavem
Instituto Tecnológico e Nuclear
Portugal, Lisbon
Centro de Física Nuclear da Universidade de Lisboa
Alves, E. Jorge
Portugal, Sacavem
Instituto Tecnológico e Nuclear
Portugal, Lisbon
Centro de Física Nuclear da Universidade de Lisboa
Wendler, Elke
Germany, Jena
Friedrich-schiller-universität Jena
Bilani, O.
Germany, Jena
Friedrich-schiller-universität Jena
Wesch, Werner
Germany, Jena
Friedrich-schiller-universität Jena
Hayes, Michael C.
South Africa, Pretoria
University of Pretoria
Statistics
Citations: 110
Authors: 6
Affiliations: 4
Identifiers
Doi:
10.1063/1.2126137
ISSN:
00036951