Analysis of electroluminescence spectra of silicon and gallium arsenide p-n junctions in avalanche breakdown

A general model for the interpretation of EL spectra measured under avalanche breakdown conditions is presented. It is an extension of the model of Yamada and Kiato that took self-absorption into account. The model presented is based on basic physical mechanisms such as interband transitions and self-absorption. It is validated by analysis of EL spectra obtained separately on indirect band gap semiconductors, such as Si junctions, and on direct band gap semiconductors, such as GaAs junctions.