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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
engineering
Investigation of photoelectrical properties of CdSe nanocrystals embedded in a SiO
2
matrix
Semiconductor Science and Technology, Volume 23, No. 9, Article 095025, Year 2008
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Description
CdSe nanocrystals (NCs) embedded in SiO2 thin films were prepared using RF-magnetron co-sputtering. The average NC size was estimated to be 18 nm. The dark and photocurrent temporal dependences have been measured as a function of the magnitude of applied voltage (50-150 V). Annealing the samples seems to improve the photoconductivity (∼10-12 Ω-1) that increases with the film thickness and slightly changes under the bias voltage. Furthermore, the photovoltage measurements showed that a concentration of CdSe in the range of 27 mol% leads to the generation of a photovoltaic signal up to 5 V at 400 μW cm-2. These results demonstrate the potential of silica films with embedded CdSe NCs for photovoltaic applications. © 2008 IOP Publishing Ltd.
Authors & Co-Authors
Kafadaryan, E. A.
Armenia, Ashtarak
Institute for Physical Research National Academy of Sciences of Armenia
Levichev, S.
Portugal, Braga
Universidade do Minho
Pinto, Sara R.C.
Portugal, Braga
Universidade do Minho
Aghamalyan, N. R.
Armenia, Ashtarak
Institute for Physical Research National Academy of Sciences of Armenia
Hovsepyan, R. K.
Armenia, Ashtarak
Institute for Physical Research National Academy of Sciences of Armenia
Badalyan, G. R.
Armenia, Ashtarak
Institute for Physical Research National Academy of Sciences of Armenia
Chahboun, Adil
Portugal, Braga
Universidade do Minho
Morocco, Fez
Faculté Des Sciences Dhar el Mahraz, Université Sidi Mohamed Ben Abdellah
Rolo, Anabela G.
Portugal, Braga
Universidade do Minho
Gomes, Maria Jesus Matos
Portugal, Braga
Universidade do Minho
Statistics
Citations: 9
Authors: 9
Affiliations: 3
Identifiers
Doi:
10.1088/0268-1242/23/9/095025
ISSN:
02681242
e-ISSN:
13616641