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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
physics and astronomy
Electron-hole two-stream instability in a quantum semiconductor plasma with exchange-correlation effects
Physics Letters, Section A: General, Atomic and Solid State Physics, Volume 376, No. 34, Year 2012
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Description
The electron-hole two-stream instability in a quantum semiconductor plasma has been studied including electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures of the plasma species. Typical values of GaAs and GaSb semiconductors are used to estimate the growth rate of the two-stream instability. The effects of electron- and hole-phonon collision, quantum recoil effects, the streaming velocities, and the corresponding threshold on the growth rate are investigated numerically. Considering the phonon susceptibility allows the acoustic mode to exist and the collisional instability arises in combination with drift of the holes. © 2012 Elsevier B.V. All rights reserved.
Authors & Co-Authors
Zeba, I.
Pakistan, Lahore
Government College University Lahore
Germany, Bochum
Ruhr-universitat Bochum
Yahia, Mohamed E.
Egypt, El Shorouk
Faculty of Engineering
Shukła, Padma Kant
Germany, Bochum
Ruhr-universitat Bochum
United States, La Jolla
Center for Energy Research
Moslem, Waleed M.
Germany, Bochum
Ruhr-universitat Bochum
Egypt, Port Said
Faculty of Science
Statistics
Citations: 66
Authors: 4
Affiliations: 5
Identifiers
Doi:
10.1016/j.physleta.2012.05.049
ISSN:
03759601