Skip to content
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Menu
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Menu
Home
About Us
Resources
Profiles Metrics
Authors Directory
Institutions Directory
Top Authors
Top Institutions
Top Sponsors
AI Digest
Contact Us
Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
materials science
Electronic structures of GaN edge dislocations
Physical Review B - Condensed Matter and Materials Physics, Volume 61, No. 23, Year 2000
Notification
URL copied to clipboard!
Description
We investigate atomic and electronic structures of the threading edge dislocations of GaN using self-consistent-charge density-functional tight-binding approaches. Full-core, open-core, Ga-vacancy, and N-vacancy edge dislocations are fully relaxed in our total-energy scheme. The Ga-vacancy dislocation is the most stable in a wide range of Ga chemical potentials, whereas full-core and open-core dislocations are more stable than others in the Ga-rich region. Partial dehybridization takes place during the lattice relaxation near the dislocation in all cases. The dangling bonds at Ga atoms mostly contribute to the deep-gap states, whereas those at N atoms contribute to the valence-band tails. All the edge dislocations can act as deep trap centers, except the Ga-vacancy dislocation, which may act as an origin of yellow luminescence. © 2000 The American Physical Society.
Authors & Co-Authors
Belkhir, Mohamed Akli
South Korea, Jeonju
Jeonbuk National University
Lee, Younghee
South Korea, Jeonju
Jeonbuk National University
Statistics
Citations: 141
Authors: 2
Affiliations: 2
Identifiers
Doi:
10.1103/PhysRevB.61.16033
ISSN:
10980121