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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
materials science
Demonstration of a NOR logic gate using a single molecule and two surface gold atoms to encode the logical input
Physical Review B - Condensed Matter and Materials Physics, Volume 83, No. 15, Article 155443, Year 2011
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Description
A logic gate has been implemented in a single trinaphthylene molecule. Each logical input controls the position of a surface Au atom that is brought closer or further away from the end of one of the naphthyl branch. Each Au atom carries 1 bit of information and is able to deform nonlocally and to shift in energy the molecular electronic states of the trinaphthylene. Probed at the end of the third naphthyl branch using scanning tunneling spectroscopy, the variations of the tunneling current intensity as a function of the Au atoms position measures the logical output of the gate. We demonstrate both theoretically and experimentally that these variations respect the truth table of a NOR logic gate. © 2011 American Physical Society.
Authors & Co-Authors
Soe, W. H.
Singapore, Singapore City
A-star, Institute of Materials Research and Engineering
Manzano, C.
Singapore, Singapore City
A-star, Institute of Materials Research and Engineering
de Sarkar, Abir
Singapore, Singapore City
A-star, Institute of Materials Research and Engineering
Ample, F.
Singapore, Singapore City
A-star, Institute of Materials Research and Engineering
Chandrasekhar, N.
Singapore, Singapore City
A-star, Institute of Materials Research and Engineering
Renaud, N.
United States, Evanston
Northwestern University
De Mendoza, P.
Spain, Tarragona
Institut Català D’investigació Química
Echavarren, A. M.
Spain, Tarragona
Institut Català D’investigació Química
Hliwa, Mohamed
France, Toulouse
Cemes Centre D'elaboration de Matériaux et D'etudes Structurales
Morocco, Casablanca
Faculté Des Sciences Ben M’sick
Joachim, Christian
Singapore, Singapore City
A-star, Institute of Materials Research and Engineering
France, Toulouse
Cemes Centre D'elaboration de Matériaux et D'etudes Structurales
Statistics
Citations: 28
Authors: 10
Affiliations: 5
Identifiers
Doi:
10.1103/PhysRevB.83.155443
ISSN:
10980121
e-ISSN:
1550235X