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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
engineering
Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD
Journal of Alloys and Compounds, Volume 506, No. 1, Year 2010
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Description
Structural and optical studies of BxGa1-xAs epilayers, grown by metal organic chemical vapor deposition (MOCVD), at different growth temperatures (580 °C and 500 °C), have been achieved by high-resolution X-ray diffraction (HRXRD) and photoluminescence spectroscopy (PL). They have shown that the boron content increases up to 8% with decreasing growth temperature. Low temperature (10 K) PL study has shown an asymmetric broad PL band around 1.34 eV, and a decrease of the intensity with increasing boron composition. The evolution of the emission energy versus temperature can be described by the Varshni law for the high temperature range, while a relative discrepancy has been found to occur at low temperature. Moreover, depending on the temperature range, the PL intensity quenching is found to be thermally ensured by three activation energies for the smallest boron composition (x b ≈ 3%) and by two for the highest (xb ≈ 8%) one. These results are attributed to the localized states induced by the non-uniform insertion and the clustering of the boron atom in BGaAs bulk. © 2010 Elsevier B.V. All rights reserved.
Authors & Co-Authors
Hamila, Radhia
Tunisia, Monastir
Faculté Des Sciences de Monastir
Saidi, Faouzi
Tunisia, Monastir
Faculté Des Sciences de Monastir
Philippe, Rodriguez
France, Villeurbanne
Laboratoire Des Multimatériaux et Interfaces
Auvray, Laurent
France, Villeurbanne
Laboratoire Des Multimatériaux et Interfaces
Monteil, Yves
France, Villeurbanne
Laboratoire Des Multimatériaux et Interfaces
Maâref, Hassen
Tunisia, Monastir
Faculté Des Sciences de Monastir
Statistics
Citations: 25
Authors: 6
Affiliations: 2
Identifiers
Doi:
10.1016/j.jallcom.2010.06.169
ISSN:
09258388
Research Areas
Environmental