Photoionization of shallow donor impurities in finite-barrier quantum-well wires

The photon energy dependence of the photoionization cross-sections are calculated for a hydrogenic shallow impurity located in quantum-well wires of GaAs, surrounded by Ga1 - xAlxAs as a function of the sizes of the wire for several values of the heights of the potential barriers. The results we have obtained show that the photoionization cross-sections are affected by the sizes of the wire and the height of the barrier and also that their magnitude are larger than those in comparable infinite potential quantum-well wires.