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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series
IEEE Transactions on Microwave Theory and Techniques, Volume 58, No. 2, Article 5395615, Year 2010
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Description
We report on enhanced room-temperature detection of terahertz radiation by several connected field-effect transistors. For this enhanced nonresonant detection, we have designed, fabricated, and tested plasmonic structures consisting of multiple InGaAs/GaAs pseudomorphic high electron-mobility transistors connected in series. Results show a 1.63-THz response that is directly proportional to the number of detecting transistors biased by a direct drain current at the same gate-to-source bias voltages. The responsivity in the saturation regime was found to be 170 V/W with the noise equivalent power in the range of 10-7 W/Hz0.5. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by terahertz radiation in the transistor channel. © 2010 IEEE.
Authors & Co-Authors
Elkhatib, Tamer A.
United States, Troy
Rensselaer Polytechnic Institute
Kachorovskii, Valentin Y.
Russian Federation, Saint Petersburg
Ioffe Institute
Stillman, William J.
United States, Troy
Rensselaer Polytechnic Institute
Veksler, Dmitry B.
United States, Troy
Rensselaer Polytechnic Institute
United States, Austin
Sematech Austin
Salama, Khaled Nabil
United States, Troy
Rensselaer Polytechnic Institute
Saudi Arabia, Thuwal
King Abdullah University of Science and Technology
Zhang, Xi Cheng
United States, Troy
Rensselaer Polytechnic Institute
Shur, Michael S.
United States, Troy
Rensselaer Polytechnic Institute
Statistics
Citations: 50
Authors: 7
Affiliations: 4
Identifiers
Doi:
10.1109/TMTT.2009.2037872
Research Areas
Cancer
Study Approach
Qualitative