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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
physics and astronomy
Electron and hole capture at Au and Pt centers in silicon
Physical Review Letters, Volume 44, No. 9, Year 1980
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Description
Emission rates and hole-capture cross sections for the Au donor center in silicon are reported and from entropy considerations this center is shown to be similar in behavior to the Pt donor center. In contrast, the gold and platinum acceptor states display significantly different entropy changes on electron emission. A similar chemical structure for both these defects is proposed which is then used to interpret differences in electron emission behavior from the acceptor forms of the two defects. © 1980 The American Physical Society.
Authors & Co-Authors
Brotherton, Stanley D.
Netherlands, Eindhoven
Philips Research
Lowther, John Edward
Netherlands, Eindhoven
Philips Research
South Africa, Johannesburg
University of the Witwatersrand
Statistics
Citations: 65
Authors: 2
Affiliations: 2
Identifiers
Doi:
10.1103/PhysRevLett.44.606
ISSN:
00319007
Research Areas
Environmental