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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
engineering
Low hysteresis threshold current (39 mA) active multimode-interferometer (MMI) bistable laser diodes using lateral-modes bistability
IEEE Journal on Selected Topics in Quantum Electronics, Volume 17, No. 5, Article 21, Year 2011
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Description
We demonstrate low hysteresis threshold current (39mA) bistable laser diodes (BLDs), with maintaining sufficient hysteresis window (7 mA, 18% of the hysteresis threshold), in active multimode-interferometer (MMI) using lateral-modes bistability. The sufficient cross-gain saturation effect, due to the lateral-modes bistability principle, enables wide hysteresis window. By using this principle, we could design the active-MMI BLDs with relatively short saturable-absorber length that has been one of the main causes of high hysteresis threshold current. In the actual design, we reduce the saturable-absorber region length to 25 μm, and thus, we could achieve a low hysteresis current of 39 mA in the active-MMI BLDs with maintaining sufficient hysteresis window for the first time. © 2011 IEEE.
Authors & Co-Authors
Jiang, Haisong
Japan, Fukuoka
Kyushu University
Bastawrous, Hany Ayad
Egypt, New Cairo
German University in Cairo
Hagio, Takuma
Japan, Fukuoka
Kyushu University
Matsuo, Shinji
Japan, Tokyo
Nippon Telegraph and Telephone Corporation
Hamamoto, Kiichi
Japan, Fukuoka
Kyushu University
Statistics
Citations: 6
Authors: 5
Affiliations: 3
Identifiers
Doi:
10.1109/JSTQE.2011.2156386
ISSN:
1077260X
Study Approach
Qualitative