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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
engineering
Developing an equivalent thermal model for discrete semiconductor packages
International Journal of Thermal Sciences, Volume 42, No. 5, Year 2003
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Description
The paper covers a useful and practical method for users of power semiconductor devices to derive dynamic thermal models of discrete semiconductor packages. Derivation is based on transient thermal impedance responses measured experimentally or deduced from semiconductor manufacturer data-sheets. Such dynamic thermal models are required for electro-thermal simulation of power electronic circuits corresponding to short power pulse excitations. Indeed in such excitations, the main transient phenomena occur inside the semiconductor die. Contrarily to classical thermal models based on simple resistor/capacitor cells, the proposed model is a behavioral thermal model based on the finite element modeling of the semiconductor chip. It takes into account the main thermal temperature-related non-linearities of package layers. The derived thermal models offer an excellent trade-off between accuracy, efficiency and CPU-cost. © 2002 Éditions scientifiques et médicales Elsevier SAS. All rights reserved.
Authors & Co-Authors
Ammous, Anis
Tunisia, Sfa
Leti
Sellami, Fayçal
Tunisia, Sfa
Leti
Ammous, Kaica¸r
France, Villeurbanne
Insa Lyon
Morel, Hervé
France, Villeurbanne
Insa Lyon
Allard, Bruno
France, Villeurbanne
Insa Lyon
Chante, Jean Pierre
France, Villeurbanne
Insa Lyon
Statistics
Citations: 28
Authors: 6
Affiliations: 2
Identifiers
Doi:
10.1016/S1290-0729(02)00053-4
ISSN:
12900729