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Publication Details
AFRICAN RESEARCH NEXUS
SHINING A SPOTLIGHT ON AFRICAN RESEARCH
engineering
Single atom doping for quantum device development in diamond and silicon
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Volume 26, No. 6, Year 2008
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Description
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species, and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers. The authors describe a single atom injector, in which the imaging and alignment capabilities of a scanning force microscope (SFM) are integrated with ion beams from a series of ion sources and with sensitive detection of current transients induced by incident ions. Ion beams are collimated by a small hole in the SFM tip and current changes induced by single ion impacts in transistor channels enable reliable detection of single ion hits. They discuss resolution limiting factors in ion placement and processing and paths to single atom (and color center) array formation for systematic testing of quantum computer architectures in silicon and diamond. © 2008 American Vacuum Society.
Authors & Co-Authors
Weis, C. D.
Unknown Affiliation
Schuh, A.
Unknown Affiliation
Batra, A.
United States, Berkeley
Lawrence Berkeley National Laboratory
Persaud, A.
United States, Berkeley
Lawrence Berkeley National Laboratory
Rangelow, I. W.
Germany, Ilmenau
Technischen Universität Ilmenau
Bokor, J.
United States, Berkeley
University of California, Berkeley
United States, Berkeley
Lawrence Berkeley National Laboratory
Lo, C. C.
United States, Berkeley
University of California, Berkeley
Cabrini, S.
United States, Berkeley
Lawrence Berkeley National Laboratory
Sideras-Haddad, Elias
South Africa, Johannesburg
University of the Witwatersrand
Fuchs, G. D.
United States, Santa Barbara
University of California, Santa Barbara
Hanson, R.
Netherlands, Delft
Kavli Institute of Nanoscience Delft
Awschalom, D. D.
United States, Santa Barbara
University of California, Santa Barbara
Schenkel, T.
United States, Berkeley
Lawrence Berkeley National Laboratory
Statistics
Citations: 46
Authors: 13
Affiliations: 6
Identifiers
Doi:
10.1116/1.2968614
ISSN:
10711023